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1 tm fn611.6 CA3102 dual high frequency differential amplifier for low power applications up to 500mhz the CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. the six transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise and a value of f t in excess of 1ghz. these features make the CA3102 useful from dc to 500mhz. bias and load resistors have been omitted to provide maximum application flexibility. the monolithic construction of the CA3102 provides close electrical and thermal matching of the amplifiers. this feature makes this device particularly useful in dual channel applications where matched performance of the two channels is required. the CA3102 has a separate substrate connection for greater design flexibility. features ? power gain 23db (typ) . . . . . . . . . . . . . . . . . . . . 200mhz ? noise figure 4.6db (typ) . . . . . . . . . . . . . . . . . . . 200mhz ? two differential amplifiers on a common substrate ? independently accessible inputs and outputs ? full military temperature range . . . . . . . -55 o c to 125 o c applications ? vhf amplifiers ?vhf mixers ? multifunction combinations - rf/mixer/oscillator; converter/if ? if amplifiers (differential and/or cascode) ? product detectors ? doubly balanced modulators and demodulators ? balanced quadrature detectors ? cascade limiters ? synchronous detectors ? balanced mixers ? synthesizers ? balanced (push-pull) cascode amplifiers ? sense amplifiers pinout CA3102 (pdip, soic) top view ordering information part number (brand) temp. range ( o c) package pkg. no. CA3102e -55 to 125 14 ld pdip e14.3 CA3102m (3102) -55 to 125 14 ld soic m14.15 substrate substrate 1 2 3 4 5 6 7 14 13 12 11 10 9 8 data sheet november 1999 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a trademark of intersil americas inc. copyright ? intersil americas inc. 2002. all rights reserved
2 absolute maximum ratings thermal information collector-to-emitter voltage, v ceo . . . . . . . . . . . . . . . . . . . . . . 15v collector-to-base voltage, v cbo . . . . . . . . . . . . . . . . . . . . . . . . 20v collector-to-substrate voltage, v cio (note 1). . . . . . . . . . . . . . 20v emitter-to-base voltage, v ebo . . . . . . . . . . . . . . . . . . . . . . . . . . 5v collector current, i c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50ma operating conditions temperature range. . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to 125 o c thermal resistance (typical, note 2) ja ( o c/w) pdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 soic package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205 maximum power dissipation (any one transistor) . . . . . . . 300mw maximum junction temperature (plastic package) . . . . . . . 150 o c maximum storage temperature range . . . . . . . . . -65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . 300 o c (soic - lead tips only) caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. the collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. the substrate (terminal 9) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transist or action. 2. ja is measured with the component mounted on an evaluation pc board in free air. electrical specifications t a = 25 o c parameter symbol test conditions min typ max units dc characteristics for each differential amplifier input offset voltage (figures 1, 4) v io - 0.25 5.0 mv input offset current (figure 1) i io i 3 = i 9 = 2ma - 0.3 3.0 a input bias current (figures 1, 5) i b -13.533 a temperature coefficient magnitude of input offset voltage -1.1- v/ o c dc characteristics for each transistor dc forward base-to-emitter voltage (figure 6) vbe v ce = 6v, i c = 1ma 674 774 874 mv temperature coefficient of base-to-emitter voltage (figure 6) v ce = 6v, i c = 1ma - -0.9 - mv/ o c collector cutoff current (figure 7) i cbo v cb = 10v, i e = 0 - 0.0013 100 na collector-to-emitter breakdown voltage v (br)ceo i c = 1ma, i b = 0 15 24 - v collector-to-base breakdown voltage v (br)cbo i c = 10 a, i e = 0 20 60 - v collector-to-substrate breakdown voltage v (br)cio i c = 10 a, i b = i e = 0 20 60 - v emitter-to-base breakdown voltage v (br)ebo i e = 10 a, i c = 0 5 7 - v dynamic characteristics for each differential amplifier 1/f noise figure (for single transistor) (figure 12) nf f = 100khz, r s = 500 ? , i c = 1ma -1.5-db gain bandwidth product (for single transistor) (figure 11) f t v ce = 6v, i c = 5ma - 1.35 - ghz collector-base capacitance (figure 8) c cb i c = 0, v cb = 5v note 3 - 0.28 - pf note 4 - 0.15 - pf collector-substrate capacitance (figure 8) c ci i c = 0, v ci = 5v - 1.65 - pf common mode rejection ratio cmrr i 3 = i 9 = 2ma - 100 - db agc range, one stage (figure 2) agc bias voltage = -6v - 75 - db voltage gain, single-ended output (figures 2, 9, 10) a bias voltage = -4.2v, f = 10mhz 18 22 - db ? v io ? t ---------------- ? v be ? t -------------- - CA3102
3 insertion power gain (figure 3) g p v cc = 12v, for cascode configuration i 3 =i 9 =2ma. for diff. amp. configuration i 3 =i 9 = 4ma (each collector i c ? 2ma) f = 200mhz cascode - 23 - db noise figure (figure 3) nf cascode - 4.6 - db input admittance y 11 cascode (figures 14, 16, 18) - 1.5 + j2.45 - ms diff. amp. (figures 15, 17, 19) - 0.878 + j1.3 - ms reverse transfer admittance y 12 cascode - 0.0 - j0.008 - ms diff. amp. - 0.0 - j0.013 - ms forward transfer admittance y 21 cascode (figures 26, 28, 30) - 17.9 - j30.7 - ms diff. amp. (figures 27, 29, 31) - -10.5 + j13 - ms output admittance y 22 cascode (figures 20, 22, 24) - -0.503 - j15 - ms diff. amp. (figures 21, 23, 25) - 0.071 + j0.62 - ms notes: 3. terminals 1 and 14 or 7 and 8. 4. terminals 13 and 4 or 6 and 11. electrical specifications t a = 25 o c (continued) parameter symbol test conditions min typ max units schematic diagram CA3102e, CA3102m 114 13 4 2 q 2 q 1 3 q 3 8 11 q 6 q 5 9 q 4 7 6 10 12 5 substrate CA3102
4 test circuits figure 1. dc characteristics test circuit for CA3102 figure 2. agc range and voltage gain test circuit for CA3102 figure 3. 200mhz cascode power gain and noise figure test circuit m m m i 3 or i 9 v x v- (-6v) v+ (+6v) 1k ? 1k ? s 2 s 1 s 1 s 2 1k ? +1v -1v v o 4 -6v +6v 100 ? (11) 13 (6) 14 (7) v out 1k ? q 1 (q 5 ) q 2 (q 6 ) 1 10 f v in 100 ? (8) 2 bias voltage 3 500 ? (10) (9) 5 12 q 3 (q 4 ) q 1 (q 5 ) q 2 (q 6 ) 0.005 f 1(8) 14(7) substrate 5(12) q 3 (q 4 ) 3 (9) 2 (10) 4 (11) 13 (6) c 1 0.001 f 2k ? 5.6pf 1k ? l 1 5 f input r g = 50 ? ma 0.001 f 100pf 5k ? +12v 100 ? 6v 2+ 0.001 f ferrite beads 5pf 0.001 f 13k ? c 2 100pf 100pf output r l = 50 ? l 2 0.001 f 0.001 f 2.7pf 10k ? 1/2 CA3102 notes: 5. numbers in parentheses refer to the other half of the CA3102. 6. l 1 , l 2 - approximately 1 / 2 turn #18 tinned copper wire, 5/8? diameter. 7. c 1 , c 2 - 15pf variable capacitors (hammarlund, mac-15; or equivalent). 470pf CA3102
5 typical performance curves figure 4. input offset voltage vs emitter current figure 5. input bias current vs emitter current figure 6. base-to-emitter voltage vs collector current figure 7. collector cutoff current vs temperature figure 8. capacitance vs dc bias voltage figure 9. voltage gain vs dc bias voltage 0.5 0.4 0.3 0.2 input offset voltage (mv) 0.1 1 10 emitter current (ma) t a = 25 o c 100 10 1.0 0.1 input bias current ( a) 0.1 1.0 10 emitter current (ma) t a = -40 o c t a = 25 o c t a = 85 o c 1.0 0.9 0.8 0.7 0.6 0.5 base-to-emitter voltage (v) 0.1 1.0 10 collector current (ma) t a = -40 o c t a = 25 o c t a = 85 o c 1000 100 10 1.0 0.1 0.01 collector cutoff current (pa) -100 -75 -50 -25 0 25 50 75 100 temperature ( c) v cb = 10v v cb = 5v v cb = 15v 3 2 1 0 capacitance (pf) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 bias voltage (v) t a = 25 o c c ci c cb terminals 14 and 1; 7 and 8 terminals 13 and 4; 6 and 11 bias voltage on terminals 2 and 10 (v) 40 30 20 10 0 -10 -20 -30 -40 -50 voltage gain (db) 70 60 50 0-1-2-3 -4-5-6-7 t a = 25 o c v+ = 6v, v- = -6v f = 1khz CA3102
6 figure 10. voltage gain vs frequency figure 11. gain bandwidth product vs collector current figure 12. 1/f noise figure vs collector current figure 13. 1/f noise figure vs collector current figure 14. input admittance (y 11 ) vs frequency figure 15. input admittance (y 11 ) vs frequency typical performance curves (continued) 40 35 30 25 20 15 10 5 0 voltage gain (db) 0.01 0.1 1.0 10 100 frequency (mhz) t a = 25 o c 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 gain bandwidth product (ghz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 collector current (ma) t a = 25 o c 30 20 10 0 noise figure (db) 0.01 0.1 1.0 collector current (ma) t a = 25 o c r source = 500 ? f = 10hz f = 100hz f = 1khz f = 10khz f = 100khz 30 20 10 0 noise figure (db) 0.01 0.1 1.0 collector current (ma) f = 10hz f = 100hz f = 1khz f = 10khz f = 100khz t a = 25 o c r source = 1k ? 2.5 2.0 1.5 1.0 0.5 0 input conductance (g 11 ) (ms) 10 10 2 10 3 frequency (mhz) cascode amplifier v cc = 12v i 3 = i 9 = 2ma t a = 25 o c g 11 b 11 25 20 15 10 5 0 input susceptance (b 11 ) (ms) 6 5 4 3 2 1 0 input conductance (g 11 ) or susceptance (b 11 ) (ms) 10 10 2 10 3 frequency (mhz) b 11 g 11 differential amplifier v cc = 12v i 3 = i 9 = 4ma t a = 25 o c CA3102
7 figure 16. input admittance (y 11 ) vs collector supply voltage figure 17. input admittance (y 11 ) vs collector supply voltage figure 18. input admittance (y 11 ) vs emitter current figure 19. input admittance (y 11 ) vs emitter current figure 20. output admittance (y 22 ) vs frequency figure 21. output admittance (y 22 ) vs frequency typical performance curves (continued) 3 2 1 0 input conductance or susceptance (ms) 010203040 collector supply voltage (v) cascode amplifier i 3 = i 9 = 2ma t a = 25 o c f = 200mhz b 11 g 11 3 2 1 0 input conductance or susceptance (ms) 010203040 collector supply voltage (v) differential amplifier i 3 = i 9 = 4ma t a = 25 o c f = 200mhz b 11 g 11 7 6 5 4 3 2 1 0 02468 emitter current (i 3 or i 9 ) (ma) input conductance or susceptance (ms) b 11 g 11 cascode amplifier v cc = 12v t a = 25 o c f = 200mhz 3 2 1 0 input conductance or susceptance (ms) 0 5 10 15 20 emitter current (i 3 or i 9 ) (ma) g 11 b 11 differential amplifier v cc = 12v t a = 25 o c f = 200mhz 3 2 1 0 -1 -2 -3 -4 -5 -6 10 10 2 10 3 frequency (mhz) output conductance or susceptance (ms) cascode amplifier v cc = 12v t a = 25 o c i 3 = i 9 = 2ma b 22 g 22 g 22 b 22 4 3 2 1 0 -1 -2 10 10 2 10 3 frequency (mhz) output conductance or susceptance (ms) differential amplifier v cc = 12v t a = 25 o c i 3 = i 9 = 4ma CA3102
8 figure 22. output admittance (y 22 ) vs collector supply voltage figure 23. output admittance (y 22 ) vs collector supply voltage figure 24. output admittance (y 22 ) vs emitter current figure 25. output admittance (y 22 ) vs emitter current figure 26. forward transfer admittance (y 21 ) vs frequency figure 27. forward transfer admittance (y 21 ) vs frequency typical performance curves (continued) 0 -1 -2 -3 010203040 collector supply voltage (v) cascode amplifier i 3 = i 9 = 2ma t a = 25 o c f = 200mhz b 22 g 22 output conductance or susceptance (ms) 0.6 0.4 0.2 0 010203040 collector supply voltage (v) b 22 g 22 differential amplifier i 3 = i 9 = 4ma t a = 25 o c f = 200mhz output conductance or susceptance (ms) 0 -1 -2 -3 02 4 6 8 emitter current (i 3 or i 9 ) (ma) b 22 g 22 cascode amplifier v cc = 12v t a = 25 o c f = 200mhz output conductance or susceptance (ms) emitter current (i 3 or i 9 ) (ma) 0 5 10 15 20 1 0 -1 differential amplifier v cc = 12v t a = 25 o c f = 200mhz g 22 b 22 output conductance or susceptance (ms) 70 60 50 40 30 20 10 0 -10 -20 forward transfer conductance (ms) 10 10 2 10 3 frequency (mhz) g 21 b 21 cascode amplifier v cc = 12v t a = 25 o c i 3 = i 9 = 2ma forward transfer susceptance (ms) -40 -20 0 10 10 2 10 3 frequency (mhz) 50 40 30 20 10 0 -10 -20 -30 -40 differential amplifier v cc = 12v t a = 25 o c i 3 = i 9 = 4ma b 21 g 21 forward transfer conductance or susceptance (ms) CA3102
9 figure 28. forward transfer admittance (y 21 ) vs collector supply voltage figure 29. forward transfer admittance (y 21 ) vs collector supply voltage figure 30. forward transfer admittance (y 21 ) vs emitter current figure 31. forward transfer admittance (y 21 ) vs emitter current typical performance curves (continued) 20 10 0 -10 -20 -30 0 forward transfer conductance or susceptance (ms) g 21 b 21 cascode amplifier i 3 = i 9 = 2ma t a = 25 o c f = 200mhz 5 101520253035 collector supply voltage (v) 20 15 10 5 0 -5 -10 -15 0 10203040 collector supply voltage (v) forward transfer conductance or susceptance (ms) b 21 g 21 differential amplifier i 3 = i 9 = 4ma t a = 25 o c f = 200mhz b 21 g 21 40 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 forward transfer conductance or susceptance (ms) 02468101214 emitter current (i 3 or i 9 ) (ma) cascode amplifier v cc = 12v t a = 25 o c f = 200mhz emitter current (i 3 or i 9 ) (ma) 0481216 forward transfer conductance or susceptance (ms) 50 40 30 20 10 0 -10 -20 b 21 g 21 differential amplifier v cc = 12v t a = 25 o c f = 200mhz CA3102
10 CA3102 dual-in-line plastic packages (pdip) notes: 1. controlling dimensions: inch. in case of conflict between english and metric dimensions, the inch dimensions control. 2. dimensioning and tolerancing per ansi y14.5m - 1982. 3. symbols are defined in the ?mo series symbol list? in section 2.2 of publication no. 95. 4. dimensions a, a1 and l are measured with the package seated in jedec seating plane gauge gs - 3. 5. d, d1, and e1 dimensions do not include mold flash or protrusions. mold flash or protrusions shall not exceed 0.010 inch (0.25mm). 6. e and are measured with the leads constrained to be perpen- dicular to datum . 7. e b and e c are measured at the lead tips with the leads uncon- strained. e c must be zero or greater. 8. b1 maximum dimensions do not include dambar protrusions. dambar protrusions shall not exceed 0.010 inch (0.25mm). 9. n is the maximum number of terminal positions. 10. corner leads (1, n, n/2 and n/2 + 1) for e8.3, e16.3, e18.3, e28.3, e42.6 will have a b1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm). e a -c- c l e e a c e b e c -b- e1 index 12 3 n/2 n area seating base plane plane -c- d1 b1 b e d d1 a a2 l a1 -a- 0.010 (0.25) c a m bs e14.3 (jedec ms-001-aa issue d) 14 lead dual-in-line plastic package symbol inches millimeters notes minmaxminmax a - 0.210 - 5.33 4 a1 0.015 - 0.39 - 4 a2 0.115 0.195 2.93 4.95 - b 0.014 0.022 0.356 0.558 - b1 0.045 0.070 1.15 1.77 8 c 0.008 0.014 0.204 0.355 - d 0.735 0.775 18.66 19.68 5 d1 0.005 - 0.13 - 5 e 0.300 0.325 7.62 8.25 6 e1 0.240 0.280 6.10 7.11 5 e 0.100 bsc 2.54 bsc - e a 0.300 bsc 7.62 bsc 6 e b - 0.430 - 10.92 7 l 0.115 0.150 2.93 3.81 4 n14 149 rev. 0 12/93
11 all intersil u.s. products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com sales office headquarters north america intersil corporation 7585 irvine center drive suite 100 irvine, ca 92618 tel: (949) 341-7000 fax: (949) 341-7123 intersil corporation 2401 palm bay rd. palm bay, fl 32905 tel: (321) 724-7000 fax: (321) 724-7946 europe intersil europe sarl ave. william graisse, 3 1006 lausanne switzerland tel: +41 21 6140560 fax: +41 21 6140579 asia intersil corporation unit 1804 18/f guangdong water building 83 austin road tst, kowloon hong kong tel: +852 2723 6339 fax: +852 2730 1433 CA3102 small outline plastic packages (soic) notes: 1. symbols are defined in the ?mo series symbol list? in section 2.2 of publication number 95. 2. dimensioning and tolerancing per ansi y14.5m - 1982. 3. dimension ?d? does not include mold flash, protrusions or gate burrs. mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. dimension ?e? does not include interlead flash or protrusions. interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. the chamfer on the body is optional. if it is not present, a visual index feature must be located within the crosshatched area. 6. ?l? is the length of terminal for soldering to a substrate. 7. ?n? is the number of terminal positions. 8. terminal numbers are shown for reference only. 9. the lead width ?b?, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. controlling dimension: millimeter. converted inch dimensions are not necessarily exact. index area e d n 123 -b- 0.25(0.010) c a m bs e -a- l b m -c- a1 a seating plane 0.10(0.004) h x 45 o c h 0.25(0.010) b m m m14.15 (jedec ms-012-ab issue c) 14 lead narrow body small outline plastic package symbol inches millimeters notes minmaxminmax a 0.0532 0.0688 1.35 1.75 - a1 0.0040 0.0098 0.10 0.25 - b 0.013 0.020 0.33 0.51 9 c 0.0075 0.0098 0.19 0.25 - d 0.3367 0.3444 8.55 8.75 3 e 0.1497 0.1574 3.80 4.00 4 e 0.050 bsc 1.27 bsc - h 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 l 0.016 0.050 0.40 1.27 6 n14 147 0 o 8 o 0 o 8 o - rev. 0 12/93

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